Datasheet CMF20120D - Cree MOSFET, SIC, N CH, 1200 V, 33 A, TO247 — Ficha de datos

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Manufacturer: Cree

Description: MOSFET, SIC, N CH, 1200 V, 33 A, TO247

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Application Note

Docket:
Application Considerations for SiC MOSFETs
January 2011
Application Considerations for Silicon Carbide MOSFETs
Application Considerations for Silicon Carbide MOSFETs
Author: Bob Callanan, Cree, Inc.

Specifications:

• Current Id Max: 33 A
• Drain Source Voltage Vds: 1.2 kV
• Number of Pins: 3
• On Resistance Rds(on): 80 MOhm
• Operating Temperature Range: -55°C to +125°C
• Power Dissipation: 150 W
• Rds(on) Test Voltage Vgs: 20 V
• Transistor Case Style: TO-247
• Transistor Polarity: N Channel
• Voltage Vgs Max: 25 V

RoHS: Yes

Accessories:

• Fischer Elektronik - FK 243 MI 247 H
• IXYS RF - DEIC420
• WAKEFIELD SOLUTIONS - 120-5.