Datasheet SIE818DF-T1-E3 - Vishay MOSFET, N, POLAR PAK — Ficha de datos
Part Number: SIE818DF-T1-E3
Descripción detallada
Manufacturer: Vishay
Description: MOSFET, N, POLAR PAK
Docket:
SiE818DF
Vishay Siliconix
N-Channel 75-V (D-S) MOSFET
PRODUCT SUMMARY
ID (A)a VDS (V) 75 RDS(on) ()e 0.0095 at VGS = 10 V 0.0125 at VGS = 4.5 V Silicon Limit 79 69 Package Qg (Typ.) Limit 60 60 33 nC
Specifications:
- Base Number: 818
- Continuous Drain Current Id: 79 A
- Current Id Max: 60 A
- Drain Source Voltage Vds: 75 V
- Mounting Type: SMD
- N-channel Gate Charge: 33nC
- Number of Pins: 10
- On Resistance Rds(on): 9.5 MOhm
- On State Resistance @ Vgs = 4.5V: 12.5 MOhm
- On State resistance @ Vgs = 10V: 9.5 MOhm
- Operating Temperature Range: -50°C to +150°C
- Package / Case: PolarPAK
- Power Dissipation Pd: 125 W
- Pulse Current Idm: 80 A
- Rds(on) Test Voltage Vgs: 10 V
- Threshold Voltage Vgs Typ: 2.1 V
- Transistor Case Style: PolarPAK
- Transistor Polarity: N Channel
- Voltage Vds Typ: 75 V
- Voltage Vgs Max: 2.1 V
- Voltage Vgs Rds on Measurement: 10 V
- Voltage Vgs th Max: 3 V
- Voltage Vgs th Min: 1.5 V
RoHS: Y-Ex
Accessories:
- Panasonic - EYGA091203SM
- Panasonic - EYGA121807A
Otros nombres:
SIE818DFT1E3, SIE818DF T1 E3