Datasheet SIE818DF-T1-E3 - Vishay MOSFET, N, POLAR PAK — Ficha de datos

Vishay SIE818DF-T1-E3

Part Number: SIE818DF-T1-E3

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, N, POLAR PAK

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Docket:
SiE818DF
Vishay Siliconix
N-Channel 75-V (D-S) MOSFET
PRODUCT SUMMARY
ID (A)a VDS (V) 75 RDS(on) ()e 0.0095 at VGS = 10 V 0.0125 at VGS = 4.5 V Silicon Limit 79 69 Package Qg (Typ.) Limit 60 60 33 nC

Specifications:

  • Base Number: 818
  • Continuous Drain Current Id: 79 A
  • Current Id Max: 60 A
  • Drain Source Voltage Vds: 75 V
  • Mounting Type: SMD
  • N-channel Gate Charge: 33nC
  • Number of Pins: 10
  • On Resistance Rds(on): 9.5 MOhm
  • On State Resistance @ Vgs = 4.5V: 12.5 MOhm
  • On State resistance @ Vgs = 10V: 9.5 MOhm
  • Operating Temperature Range: -50°C to +150°C
  • Package / Case: PolarPAK
  • Power Dissipation Pd: 125 W
  • Pulse Current Idm: 80 A
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 2.1 V
  • Transistor Case Style: PolarPAK
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 75 V
  • Voltage Vgs Max: 2.1 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Max: 3 V
  • Voltage Vgs th Min: 1.5 V

RoHS: Y-Ex

Accessories:

  • Panasonic - EYGA091203SM
  • Panasonic - EYGA121807A

Otros nombres:

SIE818DFT1E3, SIE818DF T1 E3