Datasheet SI4886DY - Vishay MOSFET, N, SO-8 — Ficha de datos

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Manufacturer: Vishay

Description: MOSFET, N, SO-8

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Docket:
Si4886DY
New Product
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY

Specifications:

• Continuous Drain Current Id: 9.5 A
• Current Id Max: 9.5 A
• Drain Source Voltage Vds: 30 V
• Fall Time tf: 18 ns
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: SMD
• N-channel Gate Charge: 14.5nC
• Number of Pins: 8
• Number of Transistors: 1
• On Resistance Rds(on): 10 MOhm
• On State Resistance @ Vgs = 4.5V: 13.5 MOhm
• On State resistance @ Vgs = 10V: 10 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC
• Power Dissipation Pd: 1.56 W
• Pulse Current Idm: 50 A
• Rds(on) Test Voltage Vgs: 10 V
• Rise Time: 5 ns
• Threshold Voltage Vgs Typ: 800 mV
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Turn Off Time: 42 ns
• Turn On Time: 14 ns
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes

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