Datasheet SI4800BDY - Vishay MOSFET, N, SO-8 — Ficha de datos

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, N, SO-8

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Docket:
Si4800BDY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)

Specifications:

• Continuous Drain Current Id: 6.5 A
• Current Id Max: 6.5 A
• Drain Source Voltage Vds: 30 V
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 1
• On Resistance Rds(on): 18.5 MOhm
• On State Resistance @ Vgs = 4.5V: 30 MOhm
• On State resistance @ Vgs = 10V: 18.5 MOhm
• Operating Temperature Range: -55°C to +150°C
• P Channel Gate Charge: 8.7nC
• Package / Case: SOIC
• Power Dissipation Pd: 1.3 W
• Pulse Current Idm: 40 A
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 1.8 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 25 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Dow Corning - 2265931
• Fischer Elektronik - ICK SMD A 5 SA
• Fischer Elektronik - WLK 5