Datasheet SI7186DP-T1-E3 - Vishay MOSFET, N, PPAK, SO-8 — Ficha de datos
Part Number: SI7186DP-T1-E3
Descripción detallada
Manufacturer: Vishay
Description: MOSFET, N, PPAK, SO-8
Docket:
Si7186DP
Vishay Siliconix
N-Channel 80-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 80 RDS(on) () 0.0125 at VGS = 10 V ID (A)a 32g Qg (Typ.) 46 nC
Specifications:
- Continuous Drain Current Id: 32 A
- Current Id Max: 14.5 A
- Drain Source Voltage Vds: 80 V
- Junction Temperature Tj Max: 150°C
- Mounting Type: SMD
- On Resistance Rds(on): 12.5 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: PowerPAK
- Power Dissipation Pd: 64 W
- Rds(on) Test Voltage Vgs: 10 V
- Rise Time: 11 ns
- Transistor Polarity: N Channel
- Voltage Vds Typ: 80 V
- Voltage Vgs Max: 20 V
- Voltage Vgs Rds on Measurement: 10 V
- Voltage Vgs th Max: 4.5 V
- Voltage Vgs th Min: 2.5 V
RoHS: Yes
Accessories:
- Panasonic - EYGA091203SM
- Panasonic - EYGA121807A
Otros nombres:
SI7186DPT1E3, SI7186DP T1 E3