Datasheet SI9410BDY - Vishay MOSFET, N, SO-8 — Ficha de datos

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, N, SO-8

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Docket:
Si9410BDY
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

• Continuous Drain Current Id: 6.2 A
• Current Id Max: 6.2 A
• Drain Source Voltage Vds: 30 V
• Fall Time tf: 11 ns
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: SMD
• N-channel Gate Charge: 15nC
• Number of Pins: 8
• Number of Transistors: 1
• On State Resistance @ Vgs = 4.5V: 33 MOhm
• On State Resistance: 24 MOhm
• On State resistance @ Vgs = 10V: 24 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC
• Power Dissipation Pd: 1.5 W
• Pulse Current Idm: 30 A
• Rds(on) Test Voltage Vgs: 10 V
• Rise Time: 15 ns
• Threshold Voltage Vgs Typ: 1 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Turn Off Time: 30 ns
• Turn On Time: 10 ns
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes

Accessories:

• Dow Corning - 2265931
• Fischer Elektronik - ICK SMD A 5 SA
• Fischer Elektronik - WLK 5