Datasheet SI7476DP-T1-GE3 - Vishay N CHANNEL MOSFET, 40 V, 25 A, SOIC — Ficha de datos

Vishay SI7476DP-T1-GE3

Part Number: SI7476DP-T1-GE3

Descripción detallada

Manufacturer: Vishay

Description: N CHANNEL MOSFET, 40 V, 25 A, SOIC

data sheetDownload Data Sheet

Docket:
Si7476DP
Vishay Siliconix
N-Channel 40-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V) 40 RDS(on) () 0.0053 at VGS = 10 V 0.0066 at VGS = 4.5 V ID (A) 25 23

Specifications:

  • Continuous Drain Current Id: 25 A
  • Drain Source Voltage Vds: 40 V
  • On Resistance Rds(on): 5.3 MOhm
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 1 V
  • Transistor Polarity: N Channel

RoHS: Y-Ex

Otros nombres:

SI7476DPT1GE3, SI7476DP T1 GE3