Datasheet SI4890BDY-T1-E3 - Vishay N CHANNEL MOSFET, 30 V, 16 A, SOIC — Ficha de datos

Vishay SI4890BDY-T1-E3

Part Number: SI4890BDY-T1-E3

Descripción detallada

Manufacturer: Vishay

Description: N CHANNEL MOSFET, 30 V, 16 A, SOIC

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Docket:
Si4890BDY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) () 0.012 at VGS = 10 V 0.016 at VGS = 4.5 V ID (A)a 16 10 nC 14 Qg (Typ.)

Simulation ModelSimulation Model

Specifications:

  • Continuous Drain Current Id: 16 A
  • Drain Source Voltage Vds: 30 V
  • On Resistance Rds(on): 16 MOhm
  • Rds(on) Test Voltage Vgs: 25 V
  • Threshold Voltage Vgs Typ: 2.6 V
  • Transistor Polarity: N Channel

RoHS: Y-Ex

Otros nombres:

SI4890BDYT1E3, SI4890BDY T1 E3