Datasheet SI4842BDY-T1-GE3 - Vishay N CHANNEL MOSFET, 30 V, 28 A, SOIC — Ficha de datos

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Manufacturer: Vishay

Description: N CHANNEL MOSFET, 30 V, 28 A, SOIC

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Docket:
Si4842BDY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) () 0.0042 at VGS = 10 V 0.0057 at VGS = 4.5 V ID (A)a 28 29 nC 24 Qg (Typ.)

Specifications:

• Continuous Drain Current Id: 28 A
• Drain Source Voltage Vds: 30 V
• On Resistance Rds(on): 5.7 MOhm
• Rds(on) Test Voltage Vgs: 20 V
• Threshold Voltage Vgs Typ: 20 V
• Transistor Polarity: N Channel

RoHS: Y-Ex

Otros nombres:

SI4842BDYT1GE3, SI4842BDY T1 GE3