Datasheet SI4410BDY-T1-GE3 - Vishay N CH MOSFET — Ficha de datos
Part Number: SI4410BDY-T1-GE3
Descripción detallada
Manufacturer: Vishay
Description: N CH MOSFET
Docket:
Si4410BDY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) () 0.0135 at VGS = 10 V 0.020 at VGS = 4.5 V ID (A) 10 8
Specifications:
- Continuous Drain Current Id: 10 A
- Drain Source Voltage Vds: 30 V
- On Resistance Rds(on): 20 MOhm
- Power Dissipation Pd: 2.5 W
- Rds(on) Test Voltage Vgs: 4.5 V
- Threshold Voltage Vgs Typ: 1 V
- Transistor Polarity: N Channel
RoHS: Y-Ex
Otros nombres:
SI4410BDYT1GE3, SI4410BDY T1 GE3