Datasheet SI2312BDS-T1-E3 - Vishay MOSFET, N, SOT-23 — Ficha de datos
Part Number: SI2312BDS-T1-E3
Descripción detallada
Manufacturer: Vishay
Description: MOSFET, N, SOT-23
Specifications:
- Base Number: 2312
- Continuous Drain Current Id: 3.9 A
- Current Id Max: 5 A
- Drain Source Voltage Vds: 20 V
- Mounting Type: SMD
- Number of Pins: 3
- On Resistance Rds(on): 47 MOhm
- Package / Case: SOT-23
- Power Dissipation Pd: 750µ W
- Pulse Current Idm: 15 A
- Rds(on) Test Voltage Vgs: 4.5 V
- SMD Marking: M2
- Threshold Voltage Vgs Typ: 850 mV
- Transistor Case Style: SOT-23
- Transistor Polarity: N Channel
- Voltage Vds Typ: 20 V
- Voltage Vgs Max: 850 mV
- Voltage Vgs Rds on Measurement: 4.5 V
- Voltage Vgs th Max: 0.85 V
- Voltage Vgs th Min: 0.45 V
RoHS: Yes
Otros nombres:
SI2312BDST1E3, SI2312BDS T1 E3