Datasheet SQM40N10-30-GE3 - Vishay MOSFET, N CH, W DIODE, 100 V, 40 A, TO-263 — Ficha de datos
Part Number: SQM40N10-30-GE3
Descripción detallada
Manufacturer: Vishay
Description: MOSFET, N CH, W DIODE, 100 V, 40 A, TO-263
Docket:
SQM40N10-30
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 6.0 V ID (A) Configuration 100 0.030 0.034 40 Single
Specifications:
- Continuous Drain Current Id: 40 A
- Drain Source Voltage Vds: 100 V
- Number of Pins: 3
- On State Resistance: 0.023 Ohm
- Operating Temperature Range: -55°C to +175°C
- Power Dissipation Pd: 107 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: TO-263
- Transistor Polarity: N Channel
- Voltage Vgs Max: 20 V
RoHS: Yes
Otros nombres:
SQM40N1030GE3, SQM40N10 30 GE3