Datasheet SIS452DN-T1-GE3 - Vishay MOSFET, N CH, DIODE, 12 V, 35 A, PPAK1212-8 — Ficha de datos
Part Number: SIS452DN-T1-GE3
Descripción detallada
Manufacturer: Vishay
Description: MOSFET, N CH, DIODE, 12 V, 35 A, PPAK1212-8
Docket:
New Product
SiS452DN
Vishay Siliconix
N-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
Specifications:
- Current Id Max: 27.9 A
- Drain Source Voltage Vds: 12 V
- Number of Pins: 8
- On State Resistance: 2600µ Ohm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation Pd: 3.8 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: PowerPAK 1212
- Transistor Polarity: N Channel
- Voltage Vgs Max: 20 V
RoHS: Yes
Accessories:
- Analog Devices - ADP3623ARDZ-RL
- Electrolube - SMA10SL
Otros nombres:
SIS452DNT1GE3, SIS452DN T1 GE3