Datasheet SIR876DP-T1-GE3 - Vishay MOSFET, N CH, DIODE, 100 V, 40 A, PPAKSO8 — Ficha de datos

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Manufacturer: Vishay

Description: MOSFET, N CH, DIODE, 100 V, 40 A, PPAKSO8

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Docket:
New Product
SiR876DP
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

• Current Id Max: 15.2 A
• Drain Source Voltage Vds: 100 V
• Number of Pins: 8
• On State Resistance: 8700µ Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 5 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: SOIC PowerPAK
• Transistor Polarity: N Channel
• Voltage Vgs Max: 20 V

RoHS: Yes

Accessories:

• Analog Devices - ADP3623ARDZ-RL
• Fischer Elektronik - FK 244 13 D2 PAK

Otros nombres:

SIR876DPT1GE3, SIR876DP T1 GE3