Datasheet SIJ484DP-T1-GE3 - Vishay MOSFET, N CH, DIODE, 30 V, 60 A, PPAKSO8L — Ficha de datos

Vishay SIJ484DP-T1-GE3

Part Number: SIJ484DP-T1-GE3

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, N CH, DIODE, 30 V, 60 A, PPAKSO8L

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Docket:
New Product
SiJ484DP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

  • Current Id Max: 21.5 A
  • Drain Source Voltage Vds: 30 V
  • Number of Pins: 8
  • On State Resistance: 5200µ Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation Pd: 5 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Transistor Case Style: SOIC PowerPAK
  • Transistor Polarity: N Channel
  • Voltage Vgs Max: 20 V

RoHS: Yes

Accessories:

  • Analog Devices - ADP3623ARDZ-RL
  • Fairchild - FDS6900AS
  • Fischer Elektronik - FK 244 13 D2 PAK

Otros nombres:

SIJ484DPT1GE3, SIJ484DP T1 GE3