Datasheet SI7852ADP-T1-E3 - Vishay MOSFET, N, SO-8 — Ficha de datos

Vishay SI7852ADP-T1-E3

Part Number: SI7852ADP-T1-E3

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, N, SO-8

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Docket:
Si7852ADP
Vishay Siliconix
N-Channel 80-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 80 RDS(on) () 0.017 at VGS = 10 V 0.021 at VGS = 8 V ID (A)a 30 30 Qg (Typ.) 30.5

Specifications:

  • Continuous Drain Current Id: 30 A
  • Current Id Max: 12 A
  • Drain Source Voltage Vds: 80 V
  • Junction Temperature Tj Max: 150°C
  • Mounting Type: SMD
  • Number of Pins: 8
  • On State Resistance: 17 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: PowerPAK
  • Power Dissipation Pd: 62.5 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Rise Time: 9 ns
  • Transistor Case Style: PowerPAK SO
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 80 V
  • Voltage Vgs Max: 20 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Max: 4.5 V
  • Voltage Vgs th Min: 2.5 V

RoHS: Yes

Accessories:

  • Panasonic - EYGA091203SM
  • Panasonic - EYGA121807A

Otros nombres:

SI7852ADPT1E3, SI7852ADP T1 E3