Datasheet SI7174DP-T1-GE3 - Vishay MOSFET, N, SO-8 — Ficha de datos
Part Number: SI7174DP-T1-GE3
Descripción detallada
Manufacturer: Vishay
Description: MOSFET, N, SO-8
Docket:
New Product
Si7174DP
Vishay Siliconix
N-Channel 75-V (D-S) MOSFET
PRODUCT SUMMARY
Specifications:
- Continuous Drain Current Id: 60 A
- Current Id Max: 60 A
- Drain Source Voltage Vds: 75 V
- Junction Temperature Tj Max: 150°C
- Mounting Type: SMD
- Number of Pins: 8
- On State Resistance: 7 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: PowerPAK
- Power Dissipation Pd: 104 W
- Rds(on) Test Voltage Vgs: 20 V
- Rise Time: 11 ns
- Threshold Voltage Vgs Typ: 4.5 V
- Transistor Case Style: PowerPAK SO
- Transistor Polarity: N Channel
- Voltage Vds Typ: 75 V
- Voltage Vgs Max: 4.5 V
- Voltage Vgs Rds on Measurement: 10 V
- Voltage Vgs th Max: 4.5 V
- Voltage Vgs th Min: 2.5 V
RoHS: Y-Ex
Accessories:
- Panasonic - EYGA091203SM
- Panasonic - EYGA121807A
Otros nombres:
SI7174DPT1GE3, SI7174DP T1 GE3