Datasheet SI4840BDY-T1-E3 - Vishay MOSFET, N, SO-8 — Ficha de datos

Vishay SI4840BDY-T1-E3

Part Number: SI4840BDY-T1-E3

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, N, SO-8

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Docket:
Si4840BDY
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 40 RDS(on) () 0.009 at VGS = 10 V 0.012 at VGS = 4.5 V ID (A)d 19 15 nC 16 Qg (Typ.)

Specifications:

  • Continuous Drain Current Id: 19 A
  • Current Id Max: 12.4 A
  • Drain Source Voltage Vds: 40 V
  • Junction Temperature Tj Max: 150°C
  • Mounting Type: SMD
  • Number of Pins: 8
  • On Resistance Rds(on): 9 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SOIC-8
  • Power Dissipation: 6 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Rise Time: 150 ns
  • SVHC: No SVHC (20-Jun-2011)
  • Transistor Case Style: SOIC
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 40 V
  • Voltage Vgs Max: 20 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Max: 3 V
  • Voltage Vgs th Min: 1 V

RoHS: Yes

Otros nombres:

SI4840BDYT1E3, SI4840BDY T1 E3