Datasheet SI2336DS-T1-GE3 - Vishay MOSFET, N CH, 30 V, 5.2 A, DIODE, SOT23 — Ficha de datos

Vishay SI2336DS-T1-GE3

Part Number: SI2336DS-T1-GE3

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, N CH, 30 V, 5.2 A, DIODE, SOT23

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Docket:
New Product
Si2336DS
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

  • Current Id Max: 4.3 A
  • Drain Source Voltage Vds: 30 V
  • Number of Pins: 3
  • On State Resistance: 0.034 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation Pd: 1.25 W
  • Rds(on) Test Voltage Vgs: 4.5 V
  • Transistor Case Style: SOT-23
  • Transistor Polarity: N Channel
  • Voltage Vgs Max: 8 V

RoHS: Yes

Accessories:

  • Analog Devices - ADP3623ARDZ-RL

Otros nombres:

SI2336DST1GE3, SI2336DS T1 GE3