Datasheet SI2308BDS-T1-GE3 - Vishay MOSFET, N CH, 60 V, 2.3 A, SOT23-3 — Ficha de datos

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, N CH, 60 V, 2.3 A, SOT23-3

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Docket:
New Product
Si2308BDS
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

• Current Id Max: 1.9 A
• Drain Source Voltage Vds: 60 V
• Number of Pins: 3
• On State Resistance: 130 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 1.09 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Voltage Vgs Max: 20 V

RoHS: Yes

Accessories:

• CHEMTRONICS - CW8400
• MULTICORE (SOLDER) - 698840
• Roth Elektronik - RE901

Otros nombres:

SI2308BDST1GE3, SI2308BDS T1 GE3