Datasheet SI2306BDS-T1-E3 - Vishay MOSFET, N, SOT-23 — Ficha de datos

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, N, SOT-23

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Docket:
Si2306BDS
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) () 0.047 at VGS = 10 V 0.065 at VGS = 4.5 V ID (A) 4.0 3.5 Qg (Typ.) 3.0

Specifications:

• Continuous Drain Current Id: 4 A
• Current Id Max: 3.16 A
• Drain Source Voltage Vds: 30 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 47 MOhm
• Package / Case: SOT-23
• Power Dissipation: 1.25 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 3 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Otros nombres:

SI2306BDST1E3, SI2306BDS T1 E3