Datasheet SI4425BDY - Vishay MOSFET, P, SO-8 — Ficha de datos

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Manufacturer: Vishay

Description: MOSFET, P, SO-8

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Docket:
Si4425BDY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)

Specifications:

• Continuous Drain Current Id: 8.8 A
• Current Id Max: -8.8 A
• Drain Source Voltage Vds: 30 V
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 1
• On State Resistance @ Vgs = 4.5V: 19 MOhm
• On State Resistance: 12 MOhm
• On State resistance @ Vgs = 10V: 12 MOhm
• Operating Temperature Range: -55°C to +150°C
• P Channel Gate Charge: 64nC
• Package / Case: SOIC
• Power Dissipation Pd: 1.5 W
• Pulse Current Idm: 50 A
• Rds(on) Test Voltage Vgs: -10 V
• Threshold Voltage Vgs Typ: -3 V
• Transistor Case Style: SOIC
• Transistor Polarity: P Channel
• Voltage Vds Typ: -30 V
• Voltage Vgs Max: -20 V
• Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes

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