Datasheet SI2301BDS - Vishay MOSFET, P, SOT-23 — Ficha de datos

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, P, SOT-23

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Docket:
Si2301BDS
Vishay Siliconix
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)

Specifications:

• Continuous Drain Current Id: 2.2 A
• Current Id Max: 2.2 A
• Current Temperature: 25°C
• Device Marking: SI2301BDS
• Drain Source Voltage Vds: 20 V
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 3
• On State Resistance @ Vgs = 2.5V P Channel: 150 MOhm
• On State Resistance @ Vgs = 4.5V P Channel: 100 MOhm
• On State Resistance Max: 100 MOhm
• On State Resistance: 100 MOhm
• Operating Temperature Range: -55°C to +150°C
• Output Power: 700 mW
• Package / Case: SOT-23
• Power Dissipation Pd: 700 mW
• Power Dissipation Ptot Max: 700 mW
• Pulse Current Idm: 10 A
• Rds(on) Test Voltage Vgs: 4.5 V
• SMD Marking: L1
• Threshold Voltage Vgs Typ: -950 mV
• Transistor Case Style: SOT-23
• Transistor Polarity: P Channel
• Voltage Vds Typ: -20 V
• Voltage Vds: 20 V
• Voltage Vgs Max: -950 mV
• Voltage Vgs Rds on Measurement: 4.5 V
• Voltage Vgs th Max: -0.95 V
• Voltage Vgs th Min: -0.45 V

RoHS: Yes

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