Datasheet SIA421DJ-T1-GE3 - Vishay P CHANNEL MOSFET, -30 V, 12 A, SC-70 — Ficha de datos

Vishay SIA421DJ-T1-GE3

Part Number: SIA421DJ-T1-GE3

Descripción detallada

Manufacturer: Vishay

Description: P CHANNEL MOSFET, -30 V, 12 A, SC-70

data sheetDownload Data Sheet

Docket:
SiA421DJ
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 30 RDS(on) () 0.035 at VGS = - 10 V 0.056 at VGS = - 4.5 V ID (A) - 12a - 12a Qg (Typ.) 10 nC

Simulation ModelSimulation Model

Specifications:

  • Continuous Drain Current, Id: -12 A
  • Drain Source Voltage, Vds: -30 V
  • On Resistance, Rds(on): 0.056 Ohm
  • Rds(on) Test Voltage, Vgs: 20 V
  • Threshold Voltage, Vgs Typ: -3 V
  • Transistor Polarity: P Channel

RoHS: Yes

Otros nombres:

SIA421DJT1GE3, SIA421DJ T1 GE3