Datasheet SIA419DJ-T1-GE3 - Vishay P CHANNEL MOSFET, -20 V, 12 A, SC-70 — Ficha de datos

Descripción detallada

Manufacturer: Vishay

Description: P CHANNEL MOSFET, -20 V, 12 A, SC-70

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Docket:
SiA419DJ
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () 0.030 at VGS = - 4.5 V 0.039 at VGS = - 2.5 V - 20 0.051 at VGS = - 1.8 V 0.066 at VGS = - 1.5 V 0.113 at VGS = - 1.2 V ID (A) - 12a - 12a - 12a - 12

Simulation Model

Specifications:

• Continuous Drain Current Id: -12 A
• Drain Source Voltage Vds: -20 V
• On Resistance Rds(on): 113 MOhm
• Rds(on) Test Voltage Vgs: 5 V
• Threshold Voltage Vgs Typ: -1 V
• Transistor Polarity: P Channel

RoHS: Yes

Otros nombres:

SIA419DJT1GE3, SIA419DJ T1 GE3