Datasheet SI9407BDY-T1-GE3 - Vishay MOSFET, P CH, 60 V, 4.7 A, 8SOIC — Ficha de datos

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Manufacturer: Vishay

Description: MOSFET, P CH, 60 V, 4.7 A, 8SOIC

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Specifications:

• Continuous Drain Current Id: -4.7 A
• Drain Source Voltage Vds: -60 V
• Number of Pins: 8
• On Resistance Rds(on): 0.1 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 5 W
• Rds(on) Test Voltage Vgs: -10 V
• Transistor Case Style: SOIC
• Transistor Polarity: P Channel
• RoHS: Y-Ex

Otros nombres:

SI9407BDYT1GE3, SI9407BDY T1 GE3