Datasheet SI4463BDY-T1-GE3 - Vishay P CHANNEL MOSFET, -20 V, 13.7 A, SOIC — Ficha de datos

Vishay SI4463BDY-T1-GE3

Part Number: SI4463BDY-T1-GE3

Descripción detallada

Manufacturer: Vishay

Description: P CHANNEL MOSFET, -20 V, 13.7 A, SOIC

Specifications:

  • Continuous Drain Current Id: 13.7 A
  • Drain Source Voltage Vds: -20 V
  • On Resistance Rds(on): 20 MOhm
  • Rds(on) Test Voltage Vgs: -2.5 V
  • Threshold Voltage Vgs Typ: -1.4 V
  • Transistor Polarity: P Channel

RoHS: Y-Ex

Otros nombres:

SI4463BDYT1GE3, SI4463BDY T1 GE3