Datasheet SI2325DS-T1-E3 - Vishay MOSFET, P CH, 150 V, 0.69 A, TO-236 — Ficha de datos
Part Number: SI2325DS-T1-E3
Descripción detallada
Manufacturer: Vishay
Description: MOSFET, P CH, 150 V, 0.69 A, TO-236
Docket:
Si2325DS
Vishay Siliconix
P-Channel 150-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 150 RDS(on) () 1.2 at VGS = - 10 V 1.3 at VGS = - 6.0 V ID (A) - 0.69 - 0.66 Qg (Typ.) 7.7
Specifications:
- Continuous Drain Current Id: -530 mA
- Drain Source Voltage Vds: -150 V
- Number of Pins: 3
- On Resistance Rds(on): 1 Ohm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation: 750 mW
- Rds(on) Test Voltage Vgs: -10 V
- Transistor Case Style: TO-236
- Transistor Polarity: P Channel
- RoHS: Yes
Otros nombres:
SI2325DST1E3, SI2325DS T1 E3