Datasheet SI7431DP-T1-GE3 - Vishay MOSFET, P CH, DIODE, 200 V, 3.8 A, SO8 PPAK — Ficha de datos

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Manufacturer: Vishay

Description: MOSFET, P CH, DIODE, 200 V, 3.8 A, SO8 PPAK

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Docket:
Si7431DP
Vishay Siliconix
P-Channel 200 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 200 RDS(on) () 0.174 at VGS = - 10 V 0.180 at VGS = - 6 V ID (A) - 3.8 - 3.6 Qg (Typ.) 88

Specifications:

• Current Id Max: -3.8 A
• Drain Source Voltage Vds: -200 V
• Number of Pins: 8
• On State Resistance: 0.145 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 5.4 W
• Rds(on) Test Voltage Vgs: -10 V
• Transistor Case Style: SOIC PowerPAK
• Transistor Polarity: P Channel
• Voltage Vgs Max: -20 V

RoHS: Yes

Accessories:

• Electrolube - SMA10SL
• Fischer Elektronik - FK 244 13 D2 PAK

Otros nombres:

SI7431DPT1GE3, SI7431DP T1 GE3