Datasheet SI7121DN-T1-GE3 - Vishay MOSFET, P, PPAK1212 — Ficha de datos
Part Number: SI7121DN-T1-GE3
Descripción detallada
Manufacturer: Vishay
Description: MOSFET, P, PPAK1212
Docket:
New Product
Si7121DN
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
Specifications:
- Continuous Drain Current Id: 16 A
- Current Id Max: -16 A
- Drain Source Voltage Vds: -30 V
- Junction Temperature Tj Max: 150°C
- Mounting Type: SMD
- Number of Pins: 8
- On Resistance Rds(on): 18 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: PowerPAK
- Power Dissipation: 52 W
- Rds(on) Test Voltage Vgs: 25 V
- Rise Time: 13 ns
- SVHC: No SVHC (20-Jun-2011)
- Threshold Voltage Vgs Typ: -3 V
- Transistor Case Style: PowerPAK 1212
- Transistor Polarity: P Channel
- Voltage Vds Typ: 30 V
- Voltage Vgs Max: -3 V
- Voltage Vgs Rds on Measurement: 10 V
- Voltage Vgs th Max: 3 V
- Voltage Vgs th Min: 1 V
RoHS: Yes
Otros nombres:
SI7121DNT1GE3, SI7121DN T1 GE3