Datasheet SI2351DS-T1-GE3 - Vishay MOSFET, P CH, 20 V, 2.8 A, SOT23-3 — Ficha de datos

Vishay SI2351DS-T1-GE3

Part Number: SI2351DS-T1-GE3

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, P CH, 20 V, 2.8 A, SOT23-3

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Docket:
Si2351DS
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
MOSFET PRODUCT SUMMARY
VDS (V) - 20 RDS(on) () 0.115 at VGS = - 4.5 V 0.205 at VGS = - 2.5 V ID (A)a - 3.0 3.2 nC - 2.2 Qg (Typ.)

Specifications:

  • Current Id Max: -2.2 A
  • Drain Source Voltage Vds: -20 V
  • Number of Pins: 3
  • On State Resistance: 92 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation Pd: 1 W
  • Rds(on) Test Voltage Vgs: -4.5 V
  • Transistor Case Style: SOT-23
  • Transistor Polarity: P Channel
  • Voltage Vgs Max: -12 V

RoHS: Yes

Accessories:

  • CHEMTRONICS - CW8400
  • EREM - 00SA
  • MULTICORE (SOLDER) - 698840
  • Roth Elektronik - RE901

Otros nombres:

SI2351DST1GE3, SI2351DS T1 GE3