Datasheet SI2319DS-T1-E3 - Vishay MOSFET, P CH, 40 V, 2.3 A, SOT23-3 — Ficha de datos

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Manufacturer: Vishay

Description: MOSFET, P CH, 40 V, 2.3 A, SOT23-3

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Docket:
Si2319DS
Vishay Siliconix
P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 40 RDS(on) () 0.082 at VGS = - 10 V 0.130 at VGS = - 4.5 V ID (A)b - 3.0 - 2.4

Specifications:

• Current Id Max: -2.3 A
• Drain Source Voltage Vds: -40 V
• Number of Pins: 3
• On State Resistance: 65 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 750 mW
• Rds(on) Test Voltage Vgs: -10 V
• Transistor Case Style: SOT-23
• Transistor Polarity: P Channel
• Voltage Vgs Max: -20 V

RoHS: Yes

Accessories:

• CHEMTRONICS - CW8400
• EREM - 00SA
• MULTICORE (SOLDER) - 698840
• Roth Elektronik - RE901

Otros nombres:

SI2319DST1E3, SI2319DS T1 E3