Datasheet SI2303CDS-T1-GE3 - Vishay P CHANNEL MOSFET, -30 V, 2.7 A TO-236 — Ficha de datos

Vishay SI2303CDS-T1-GE3

Part Number: SI2303CDS-T1-GE3

Descripción detallada

Manufacturer: Vishay

Description: P CHANNEL MOSFET, -30 V, 2.7 A TO-236

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Docket:
Si2303CDS
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
Qg (Typ.) 2 nC - 2.1

Simulation ModelSimulation Model

Specifications:

  • Continuous Drain Current Id: -2.7 A
  • Drain Source Voltage Vds: -30 V
  • On Resistance Rds(on): 0.33 Ohm
  • Rds(on) Test Voltage Vgs: 20 V
  • Threshold Voltage Vgs Typ: -3 V
  • Transistor Polarity: P Channel

RoHS: Yes

Otros nombres:

SI2303CDST1GE3, SI2303CDS T1 GE3