Datasheet SI7898DP-T1-GE3 - Vishay MOSFET, N, POWERPAK — Ficha de datos

Descripción detallada

Manufacturer: Vishay

Description: MOSFET, N, POWERPAK

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Docket:
Si7898DP
Vishay Siliconix
N-Channel 150-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 150 RDS(on) () 0.085 at VGS = 10 V 0.095 at VGS = 6.0 V ID (A) 4.8 4.5

Simulation Model

Specifications:

• Continuous Drain Current Id: 3 A
• Current Id Max: 3 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 150 V
• External Depth: 5.15 mm
• External Length / Height: 1.07 mm
• External Width: 6.15 mm
• Full Power Rating Temperature: 25°C
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Junction to Case Thermal Resistance A: 2.1 °C/W
• Mounting Type: SMD
• N-channel Gate Charge: 17nC
• Number of Pins: 8
• On State Resistance Max: 85 MOhm
• On State Resistance: 85 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: PowerPAK SO
• Power Dissipation Pd: 1.9 W
• Pulse Current Idm: 2.4 A
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: PowerPAK SO
• Transistor Polarity: N Channel
• Voltage Vds Typ: 150 V
• Voltage Vgs Max: 4 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Min: 2 V

RoHS: Yes

Accessories:

• LICEFA - V11-7-6-10
• LICEFA - V11-7
• Roth Elektronik - RE932-01

Otros nombres:

SI7898DPT1GE3, SI7898DP T1 GE3