Datasheet SI4511DY-T1-GE3 - Vishay NPN & PNP MOSFET, SOIC — Ficha de datos
Part Number: SI4511DY-T1-GE3
Descripción detallada
Manufacturer: Vishay
Description: NPN & PNP MOSFET, SOIC
Docket:
Si4511DY
Vishay Siliconix
N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) N-Channel 20 RDS(on) () 0.0145 at VGS = 10 V 0.017 at VGS = 4.5 V 0.033 at VGS = - 4.5 V 0.050 at VGS = - 2.5 V ID (A) 9.6 8.6 - 6.2 -5
Specifications:
- Continuous Drain Current Id: 9.6 A
- Drain Source Voltage Vds: 20 V
- On Resistance Rds(on): 14.5 MOhm
- Rds(on) Test Voltage Vgs: 10 V
- Threshold Voltage Vgs Typ: 1.8 V
- Transistor Polarity: N and P Channel
RoHS: Y-Ex
Otros nombres:
SI4511DYT1GE3, SI4511DY T1 GE3