Datasheet SI4102DY-T1-GE3 - Vishay MOSFET, N-CH, 100 V, 3.8 A, SO8 — Ficha de datos

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Manufacturer: Vishay

Description: MOSFET, N-CH, 100 V, 3.8 A, SO8

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Docket:
Si4102DY
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 100 RDS(on) () 0.158 at VGS = 10 V 0.175 at VGS = 6 V ID (A)d 3.8 3.6 Qg (Typ.) 4.6 nC

Specifications:

• Current Id Max: 3.8 A
• Drain Source Voltage Vds: 100 V
• Number of Pins: 8
• On State Resistance: 130 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 4.8 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vgs Max: 20 V

RoHS: Yes

Otros nombres:

SI4102DYT1GE3, SI4102DY T1 GE3