Datasheet SI2333CDS-T1-GE3 - Vishay MOSFET, P-CH, 12 V, 7.1 A, SOT23 — Ficha de datos
Part Number: SI2333CDS-T1-GE3
Descripción detallada
Manufacturer: Vishay
Description: MOSFET, P-CH, 12 V, 7.1 A, SOT23
Docket:
Si2333CDS
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
MOSFET PRODUCT SUMMARY
VDS (V) RDS(on) () 0.035 at VGS = - 4.5 V - 12 0.045 at VGS = - 2.5 V 0.059 at VGS = - 1.8 V ID (A)a - 5.1 - 4.5 - 3.9 9 nC Qg (Typ.)
Specifications:
- Current Id Max: -7.1 A
- Drain Source Voltage Vds: -12 V
- Number of Pins: 3
- On State Resistance: 28.5 MOhm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation Pd: 2.5 W
- Rds(on) Test Voltage Vgs: -4.5 V
- Transistor Case Style: SOT-23
- Transistor Polarity: P Channel
- Voltage Vgs Max: 8 V
RoHS: Yes
Otros nombres:
SI2333CDST1GE3, SI2333CDS T1 GE3