Datasheet SI2301CDS-T1-GE3 - Vishay MOSFET, P-CH, 20 V, 3.1 A, SOT23 — Ficha de datos
Part Number: SI2301CDS-T1-GE3
Descripción detallada
Manufacturer: Vishay
Description: MOSFET, P-CH, 20 V, 3.1 A, SOT23
Docket:
Si2301CDS
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
MOSFET PRODUCT SUMMARY
VDS (V) - 20 RDS(on) () 0.112 at VGS = - 4.5 V 0.142 at VGS = - 2.5 V ID (A)a - 3.1 3.3 nC - 2.7 Qg (Typ.)
Specifications:
- Current Id Max: -3.1 A
- Drain Source Voltage Vds: -20 V
- Number of Pins: 3
- On State Resistance: 90 MOhm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation Pd: 1.6 W
- Rds(on) Test Voltage Vgs: -4.5 V
- Transistor Case Style: SOT-23
- Transistor Polarity: P Channel
- Voltage Vgs Max: 8 V
RoHS: Yes
Otros nombres:
SI2301CDST1GE3, SI2301CDS T1 GE3