CSD16322Q5
www.ti.com SLPS219B – AUGUST 2009 – REVISED MAY 2010 N-Channel NexFET™ Power MOSFET
Check for Samples: CSD16322Q5 FEATURES 1 2 PRODUCT SUMMARY Optimized for 5V Gate Drive
Ultralow Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm Г— 6-mm Plastic Package VDS Drain to Source Voltage 25 V Qg Gate Charge Total (4.5V) 6.8 nC Qgd Gate Charge Gate to Drain RDS(on)
VGS(th) Drain to Source On Resistance mΩ VGS = 4.5V 4.6 mΩ VGS = 8V 3.9 mΩ Threshold Voltage 1.1 V ORDERING INFORMATION Point-of-Load Synchronous Buck in
Networking, Telecom and Computing Systems
Synchronous or Control FET Applications Package Media CSD16322Q5 SON 5-mm Г— 6-mm
Plastic Package 13-Inch
Reel The NexFETв„ў power MOSFET has been designed
to minimize losses in power conversion applications
and optimized for 5V gate drive applications.
Top View Qty Ship 2500 Tape and
Reel ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated DESCRIPTION VALUE UNIT VDS Drain to Source Voltage 25 V VGS Gate to Source Voltage +10 / –8 V Continuous Drain Current, TC = 25°C 97 A Continuous Drain Current(1) 21 A IDM Pulsed Drain Current, TA = 25°C(2) 136 A PD Power Dissipation(1) 3.1 W ID S 1 8 D TJ,
TSTG Operating Junction and Storage
Temperature Range –55 to 150 °C S 2 7 D EAS Avalanche Energy, single pulse
ID = 50A, L = 0.1mH, RG = 25Ω 125 mJ S 3 6 D (1) Typical RqJA = 39В°C/W on 1-inch2 (6.45-cm2), 2-oz. …
