Datasheet 2SK3767 - Toshiba MOSFET, N, 600 V, TO-220SIS — Ficha de datos

Toshiba 2SK3767

Part Number: 2SK3767

Descripción detallada

Manufacturer: Toshiba

Description: MOSFET, N, 600 V, TO-220SIS

Docket:
2SK3767
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)
2SK3767
Switching Regulator Applications
· · · · Low drain-source ON resistance: RDS (ON) = 3.3 (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low leakage current: IDSS = 100A (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm

Specifications:

Continuous Drain Current Id: 2 A
Current Id Max: 2 A
Drain Source Voltage Vds: 600 V
Mounting Type: Through Hole
Number of Pins: 3
On State Resistance: 4.5 Ohm
Package / Case: TO-220SIS
Power Dissipation Pd: 25 W
Pulse Current Idm: 5 A
Rds(on) Test Voltage Vgs: 10 V
Threshold Voltage Vgs Typ: 4 V
Transistor Case Style: TO-220SIS
Transistor Polarity: N Channel
Voltage Vds Typ: 600 V
Voltage Vgs Max: 30 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

Fischer Elektronik - SK 145/37,5 STS-220
Fischer Elektronik - SK 409/25,4 STS
Fischer Elektronik - SK 409/50,8 STS