Datasheet 2SK1120(F) - Toshiba MOSFET, N, TO-3P — Ficha de datos

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Manufacturer: Toshiba

Description: MOSFET, N, TO-3P

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Specifications:

• Continuous Drain Current Id: 8 A
• Current Id Max: 8 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 1 kV
• Full Power Rating Temperature: 25°C
• Lead Spacing: 5.45 mm
• Mounting Type: Through Hole
• Number of Pins: 3
• Number of Transistors: 1
• On State Resistance: 1.8 Ohm
• Package / Case: TO-3P
• Power Dissipation Pd: 150 W
• Pulse Current Idm: 24 A
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 3.5 V
• Transistor Case Style: TO-3P
• Transistor Polarity: N Channel
• Voltage Vds Typ: 1 kV
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Fischer Elektronik - WLK 5