Datasheet STY60NM60 - STMicroelectronics MOSFET N CH 600 V 60 A MAX247 — Ficha de datos

STMicroelectronics STY60NM60

Part Number: STY60NM60

Descripción detallada

Manufacturer: STMicroelectronics

Description: MOSFET N CH 600 V 60 A MAX247

Docket:
STY60NM60
N-CHANNEL 600V - 0.050 - 60A Max247 Zener-Protected MDmeshTMPower MOSFET
TYPE STY60NM60 VDSS 600V RDS(on) < 0.055 ID 60 A
TYPICAL RDS(on) = 0.050 HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL INDUSTRY'S LOWEST ON-RESISTANCE DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESHTM horizontal layout.

The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. APPLICATIONS The MDmeshTM family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
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Specifications:

Continuous Drain Current Id: 30 A
Current Id Max: 60 A
Drain Source Voltage Vds: 600 V
Mounting Type: Through Hole
Number of Pins: 3
On State Resistance: 50 MOhm
Operating Temperature Range: -65°C to +150°C
Package / Case: Max-247
Power Dissipation Pd: 560 W
Rds(on) Test Voltage Vgs: 30 V
SVHC: No SVHC (15-Dec-2010)
Threshold Voltage Vgs Typ: 4 V
Transistor Case Style: MAX-247
Transistor Polarity: N Channel
Transistor Type: Power MOSFET
Voltage Vds Typ: 600 V
Voltage Vgs Max: 4 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes