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N-channel 60 V, 0.022 Ω typ., 35 A STripFET II Power MOSFET in a DPAK package
Extracto del documento
STD30NF06LT4
N-channel 60 V, 0.022 Ω typ., 35 A STripFET™ II Power MOSFET
in a DPAK package
Datasheet -production data Features TAB Order code VDS RDS(on) max. ID STD30NF06LT4 60 V 0.028 Ω 35 A • Low threshold drive
3 • Gate charge minimized 1 DPAK Applications
• Switching applications Description
Figure 1. Internal schematic diagram 'Ć7$% * This Power MOSFET has been developed using
STMicroelectronics’ unique STripFET process,
which is specifically designed to minimize input
capacitance and gate charge. This renders the
device suitable for use as primary switch in
advanced high-efficiency isolated DC-DC
converters for telecom and computer
applications, and applications with low gate
charge driving requirements. 6 $0Y Table 1. Device summary
Order code Marking Packages Packaging STD30NF06LT4 D30NF06L DPAK Tape and reel May 2014
This is information on a product in full production. DocID026310 Rev 1 1/19
www.st.com Contents STD30NF06LT4 Contents
1 Electrical ratings 3 2 Electrical characteristics . 4
2.1 Electrical characteristics (curves) . 6 3 Test circuits 4 Package mechanical data . 9 5 Packaging mechanical data 16 6 Revision history . 18 2/19 . 8 DocID026310 Rev 1 STD30NF06LT4 1 Electrical ratings Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ± 20 V Drain-gate voltage (RGS = 20 kΩ) 60 V ID Drain current (continuous) at TC = 25 °C 35 A ID Drain current (continuous) at TC = 100 °C 25 A Drain current (pulsed) 140 A Total dissipation at TC = 25 °C 70 W 0.47 W/°C 25 V/ns -55 to 175 °C Value Unit VDGR IDM (1) PTOT Derating factor
dv/dt (2) Tstg …