Datasheet MMDF2C03HDR2G - ON Semiconductor MOSFET, NP — Ficha de datos

ON Semiconductor MMDF2C03HDR2G

Part Number: MMDF2C03HDR2G

Descripción detallada

Manufacturer: ON Semiconductor

Description: MOSFET, NP

Docket:
MMDF2C03HD
Preferred Device
Power MOSFET 2 Amps, 30 Volts
Complementary SO-8, Dual
These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance.

They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time. MiniMOSt devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc-dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

Specifications:

Cont Current Id N Channel: 4.1 A
Cont Current Id P Channel: 3 A
Current Id Max: 4.1 A
Drain Source Voltage Vds: 30 V
Mounting Type: SMD
Number of Pins: 8
On State Resistance @ Vgs = 10V N Channel: 60 MOhm
On State Resistance @ Vgs = 10V P Channel: 70 MOhm
On State Resistance @ Vgs = 4.5V N Channel: 65 MOhm
On State Resistance @ Vgs = 4.5V P Channel: 225 MOhm
Package / Case: SOIC-8
Power Dissipation Pd: 2 W
Pulse Current Idm N Channel: 21 A
Pulse Current Idm P Channel: 15 A
Rds(on) Test Voltage Vgs: 10 V
SVHC: No SVHC (15-Dec-2010)
Transistor Case Style: SOIC
Transistor Polarity: N and P Channel
Voltage Vds Typ: 30 V
Voltage Vgs Max: 1.7 V
Voltage Vgs th P Channel Max: 2 V
Voltage Vgs th P Channel Min: 1 V

RoHS: Yes

Accessories:

Roth Elektronik - RE932-01