Datasheet MTD6N15T4G - ON Semiconductor N CHANNEL MOSFET, 150 V, 6 A, D-PAK — Ficha de datos

ON Semiconductor MTD6N15T4G

Part Number: MTD6N15T4G

Descripción detallada

Manufacturer: ON Semiconductor

Description: N CHANNEL MOSFET, 150 V, 6 A, D-PAK

Docket:
MTD6N15 Power Field Effect Transistor DPAK for Surface Mount
N-Channel Enhancement-Mode Silicon Gate
This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers.
Features
V(BR)DSS 150 V

Simulation Model

Specifications:

Continuous Drain Current Id: 6 A
Drain Source Voltage Vds: 150 V
On Resistance Rds(on): 300 MOhm
Rds(on) Test Voltage Vgs: 10 V
Threshold Voltage Vgs Typ: 4.5 V
Transistor Polarity: N Channel

RoHS: Y-Ex