Datasheet NTD12N10G - ON Semiconductor MOSFET, N, D-PAK — Ficha de datos

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Manufacturer: ON Semiconductor

Description: MOSFET, N, D-PAK

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Docket:
NTD12N10
Preferred Device
Power MOSFET 12 Amps, 100 Volts
N-Channel Enhancement-Mode DPAK
Features http://onsemi.com

Simulation Model

Specifications:

• Avalanche Single Pulse Energy Eas: 75mJ
• Continuous Drain Current Id: 12 A
• Current Id Max: 12 A
• Drain Source Voltage Vds: 100 V
• Junction to Case Thermal Resistance A: 2.65°C/W
• Mounting Type: SMD
• Number of Pins: 3
• On State Resistance: 165 MOhm
• Package / Case: DPAK
• Power Dissipation Pd: 56.6 W
• Pulse Current Idm: 36 A
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 3.1 V
• Transistor Case Style: D-PAK
• Transistor Polarity: N Channel
• Voltage Vds Typ: 100 V
• Voltage Vgs Max: 3.1 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 4 V
• Voltage Vgs th Min: 2 V

RoHS: Y-Ex

Accessories:

• Fischer Elektronik - FK 244 13 D PAK
• Fischer Elektronik - WLK 5
• Roth Elektronik - RE901