Datasheet MTD5P06VT4G - ON Semiconductor MOSFET, P, D-PAK — Ficha de datos

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Manufacturer: ON Semiconductor

Description: MOSFET, P, D-PAK

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Docket:
MTD5P06V
Preferred Device
Power MOSFET
5 Amps, 60 Volts P-Channel DPAK
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes.

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

Specifications:

• Avalanche Single Pulse Energy Eas: 125mJ
• Continuous Drain Current Id: 5 A
• Current Id Max: 5 A
• Drain Source Voltage Vds: 60 V
• Mounting Type: SMD
• Number of Pins: 3
• On State Resistance: 450 MOhm
• Package / Case: DPAK
• Power Dissipation Pd: 40 W
• Pulse Current Idm: 18 A
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: -2.8 V
• Transistor Case Style: D-PAK
• Transistor Polarity: P Channel
• Voltage Vds Typ: -60 V
• Voltage Vgs Max: 2.8 V
• Voltage Vgs Rds on Measurement: -10 V
• Voltage Vgs th Max: -4 V
• Voltage Vgs th Min: -2 V

RoHS: Y-Ex

Accessories:

• Fischer Elektronik - FK 244 13 D PAK
• Fischer Elektronik - WLK 5
• Roth Elektronik - RE901