Datasheet PSMN003-30B - NXP MOSFET, N, D2-PAK — Ficha de datos

Descripción detallada

Manufacturer: NXP

Description: MOSFET, N, D2-PAK

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Docket:
PSMN003-30P; PSMN003-30B
N-channel enhancement mode field-effect transistor
Rev.

01 -- 23 October 2001 Product data
1. Description
N-channel logic level field-effect power transistor in a plastic package using TrenchMOSTM1 technology. Product availability: PSMN003-30P in SOT78 (TO-220AB) PSMN003-30B in SOT404 (D2-PAK)

Specifications:

• Avalanche Single Pulse Energy Eas: 500mJ
• Capacitance Ciss Typ: 9200 pF
• Continuous Drain Current Id: 75 A
• Current Id Max: 75 A
• Drain Source Voltage Vds: 30 V
• Junction Temperature Tj Max: 175°C
• Mounting Type: SMD
• On State Resistance: 2.4 MOhm
• Operating Temperature Range: -55°C to +175°C
• Package / Case: D2-PAK
• Power Dissipation Pd: 230 W
• Pulse Current Idm: 400 A
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: 2 V
• Transistor Case Style: D2-PAK
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 3 V
• Voltage Vgs th Min: 1 V

RoHS: Yes

Accessories:

• Fischer Elektronik - FK 244 08 D2 PAK
• Fischer Elektronik - FK 244 13 D2 PAK
• Fischer Elektronik - WLK 5

Otros nombres:

PSMN00330B, PSMN003 30B