Datasheet BST82,215 - NXP MOSFET, N CH, 100 V, 190 mA, 3-SOT-23 — Ficha de datos

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Manufacturer: NXP

Description: MOSFET, N CH, 100 V, 190 mA, 3-SOT-23

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Docket:
BST82
N-channel enhancement mode field-effect transistor
Rev.

03 -- 26 July 2000 Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM1 technology. Product availability: BST82 in SOT23.

Specifications:

• Continuous Drain Current Id: 190 mA
• Drain Source Voltage Vds: 100 V
• On Resistance Rds(on): 5 Ohm
• Rds(on) Test Voltage Vgs: 5 V
• Threshold Voltage Vgs Typ: 2 V
• Transistor Polarity: N Channel

RoHS: Yes

Otros nombres:

BST82215, BST82 215