Datasheet PSMN2R8-40PS - NXP MOSFET, N CH, 40 V, TO-220 — Ficha de datos
Part Number: PSMN2R8-40PS
Descripción detallada
Manufacturer: NXP
Description: MOSFET, N CH, 40 V, TO-220
Docket:
NXP power switching MOSFETs in compact QFN3333 package
Smaller.
Faster. Cooler.
30 V Trench 6 MOSFETs in 3.3 x 3.3 mm QFN package
A new range of 30 V Trench 6 MOSFETs in QFN3333 (SOT873) package NXP now offers a range of high-performance, 30 V, logic-level MOSFETs in QFN3333 package. Measuring only 3.3 mm x 3.3 mm x 1 mm, the devices share the same great switching performance as our Trench-6 LFPAK types but with a 60% smaller footprint. They are ideal for space-constrained designs and high-efficiency power switching applications.
Key benefits } High efficiencies in power switching applications due to the optimized RDSon and gate charge (Qg) characteristics of Trench-6 technology } Fast switching - optimized for higher switching frequencies, typically up to 500 KHz } 1 mm package height for low-profile applications } Solder die-attach provides superior thermal performance - Rth(j-mb) } Reduced switching spikes } Avalanche rated and 100% factory tested to ensure high reliability in you
Specifications:
- Drain Source Voltage Vds: 40 V
- Number of Pins: 3
- On State Resistance: 2.8 MOhm
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: TO-220
- Transistor Polarity: N Channel
RoHS: Yes
Accessories:
- CIRCUITWORKS - CW8100
- STANNOL - 535766
Otros nombres:
PSMN2R840PS, PSMN2R8 40PS